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BAR81W - Silicon RF Switching Diode

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Part number BAR81W
Manufacturer Infineon Technologies AG
File Size 407.48 KB
Description Silicon RF Switching Diode
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BAR81... Silicon RF Switching Diode  Designed for use in shunt configuration in high performance RF switches  High shunt signal isolation  Low shunt insertion loss  Optimized for short - open transformation using  lines BAR81W 4 3 1 2 Type BAR81W Package SOT343 Configuration single shunt-diode LS(nH) Marking 0.15* BBs * series inductance chip to ground Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Diode reverse voltage Forward current Total power dissipation Ts  138°C Junction temperature Operating temperature range Storage temperature Thermal Resistance Parameter Junction - soldering point1) 1For Symbol VR IF Ptot Tj Top Tstg Symbol RthJS Value 30 100 100 150 -55 ... 125 -55 ...
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