BAR81W Description
Silicon RF Switching Diode Designed for use in shunt configuration in high performance RF switches High shunt signal isolation Low shunt insertion loss Optimized for short - open transformation using λ/4 lines Pb-free (RoHS pliant) package BAR81... Type BAR81W Package SOT343 series inductance chip to ground Configuration single shunt-diode LS(nH) Marking 0.15 BBs Maximum Ratings at TA = 25°C, unless otherwise...