BAR81W
BAR81W is Silicon RF Switching Diode manufactured by Infineon.
Silicon RF Switching Diode
- Designed for use in shunt configuration in high performance RF switches
- High shunt signal isolation
- Low shunt insertion loss
- Optimized for short
- open transformation using λ/4 lines
- Pb-free (RoHS pliant) package
BAR81...
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Type BAR81W
Package SOT343
- series inductance chip to ground
Configuration single shunt-diode
LS(nH) Marking 0.15- BBs
Maximum Ratings at TA = 25°C, unless otherwise specified
Parameter
Symbol
Diode reverse voltage
Forward current
Total power dissipation
Ptot
Ts ≤ 138°C
Junction temperature
Tj
Operating temperature range
Top
Storage temperature
Tstg...
