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BAR81 - Preliminary data Silicon RF Switching Diode (Design for use in shunt configuration High shunt signal isolation Low shunt insertion loss)

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Part number BAR81
Manufacturer Siemens Semiconductor Group
File Size 46.08 KB
Description Preliminary data Silicon RF Switching Diode (Design for use in shunt configuration High shunt signal isolation Low shunt insertion loss)
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BAR 81 Silicon RF Switching Diode Preliminary data • Design for use in shunt configuration • High shunt signal isolation • Low shunt insertion loss Type BAR 81 Marking Ordering Code BBs Q62702Q62702-A1145 Pin Configuration 1=C 2=A 3=C 4=A Package MW-4 Maximum Ratings Parameter Diode reverse voltage Forward current Operating temperature range Storage temperature Symbol Values 30 100 - 55 ... + 125 - 55 ... + 150 Unit V mA °C VR IF Top Tstg Semiconductor Group 1 Feb-26-1996 BAR 81 Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol min. DC characteristics Reverse current Values typ. max. Unit IR 0.93 20 nA V 1 VR = 20 V, TA = 25 °C Forward voltage VF IF = 100 mA AC characteristics Diode capacitance CT 0.6 0.57 0.7 0.
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