BAR81
BAR81 is Silicon RF Switching Diodes manufactured by Infineon.
Silicon RF Switching Diodes
Design for use in shunt configuration High shunt signal isolation Low shunt insertion loss
3 4 2 1
VSO05553
Type BAR81
Maximum Ratings Parameter Diode reverse voltage Forward current Junction temperature
Marking BBs 1=C
Pin Configuration 2=A 3=C 4=A
Package MW-4
Symbol VR IF Tj Top Tstg
Value 30 100 150 -55 ... 125 -55 ... 150
Unit V mA °C
Operating temperature range Storage temperature
Aug-21-2001
Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. DC characteristics Reverse current VR = 20 V Forward voltage IF = 100 mA VF 0.93 1 IR 20 typ. max.
Unit nA V
AC characteristics Diode...
