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BAR81 - Silicon RF Switching Diodes

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Part number BAR81
Manufacturer Infineon Technologies AG
File Size 23.29 KB
Description Silicon RF Switching Diodes
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BAR81 Silicon RF Switching Diodes  Design for use in shunt configuration  High shunt signal isolation  Low shunt insertion loss 3 4 2 1 VSO05553 Type BAR81 Maximum Ratings Parameter Diode reverse voltage Forward current Junction temperature Marking BBs 1=C Pin Configuration 2=A 3=C 4=A Package MW-4 Symbol VR IF Tj Top Tstg Value 30 100 150 -55 ... 125 -55 ... 150 Unit V mA °C Operating temperature range Storage temperature 1 Aug-21-2001 BAR81 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. DC characteristics Reverse current VR = 20 V Forward voltage IF = 100 mA VF 0.93 1 IR 20 typ. max.
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