Siemens BUZ100
Power Transistor
| Part No. | BUZ100 |
|---|---|
| Datasheet | BUZ100 Download |
| Manufacturer |  Siemens |
| Description | Power Transistor |
| Buy | Stock & Price |
MAXIMUM RATINGS
Parameter Continuous drain current Symbol Values 60 Unit A ID IDpuls 240 TC = 101 °C Pulsed drain current TC = 25 °C Avalanche energy, single pulse EAS 250 dv/dt 6 mJ ID = 60 A, VDD = 25 V, RGS = 25 Ω L = 70 µH, Tj = 25 °C Reverse diode dv/dt kV/µs IS = 60 A, VDS = 40 V, diF/dt = 200 A/µs Tjmax = 175 °C Gate source voltage Power dissipation VGS Ptot ± 20 250 V W TC = 25 °C Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Tj Tstg RthJC RthJA -55 ... + 175 -55 ... + 175 ≤ 0.6 ≤ 75 E 55 / 175 / 56 °C K/W Semiconductor Group 1 07/96 BUZ 100ELECTRICAL CHARACTERISTICS
, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit V(BR)DSS 50 3 0.1 1 10 10 0.013 4 1 100 100 100 V VGS = 0 V, ID = 0.25 mA, Tj = -40 °C Gate threshold voltage VGS(th) 2.1 VGS=VDS, ID = 1 mA Zer...
