VBsemi Electronics BUZ100
N-Channel 60V MOSFET
| Part No. | BUZ100 |
|---|---|
| Datasheet | BUZ100 Download |
| Manufacturer | VBsemi Electronics |
| Description | N-Channel 60V MOSFET |
| Buy | Stock & Price |
FEATURES
● 175 °C Junction Temperature● Trench Power MOSFET
● Material categorization: TO-220AB D G GDS S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
(TC = 25 °C, unless otherwise noted) Parameter Symbol Limit Unit Gate-Source Voltage VGS ± 20 V Continuous Drain Current (TJ = 175 °C)b TC = 25 °C TC = 100 °C ID 120 90 Pulsed Drain Current IDM 350 A Continuous Source Current (Diode Conduction) IS 70a Avalanche Current IAS 50 Single Avalanche Energy (Duty Cycle 1 %) L = 0.1 mH EAS 125 mJ Maximum Power Dissipation TC = 25 °C TA = 25 °C PD 136 3b, 8.3b, c W Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 175 °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Case Notes: a. Package limited. b. Surface mounted on 1" x 1" FR4 board. c. t 10 s. t 10 sec Steady State Symbol RthJA RthJC Typical 15 40 0.85 Maximum 18 50 1.1 Unit °C/W 1 BUZ100-VB SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Static D...
