Siemens BUZ100L
Power Transistor
| Part No. | BUZ100L |
|---|---|
| Datasheet | BUZ100L Download |
| Manufacturer |  Siemens |
| Description | Power Transistor |
| Buy | Stock & Price |
MAXIMUM RATINGS
Parameter Continuous drain current Symbol Values 60 Unit A ID IDpuls 240 TC = 101 °C Pulsed drain current TC = 25 °C Avalanche energy, single pulse EAS 250 dv/dt 6 mJ ID = 60 A, VDD = 25 V, RGS = 25 Ω L = 70 µH, Tj = 25 °C Reverse diode dv/dt kV/µs IS = 60 A, VDS = 40 V, diF/dt = 200 A/µs Tjmax = 175 °C Gate source voltage Gate-source peak voltage,aperiodic Power dissipation VGS Vgs Ptot ± 14 ± 20 V W TC = 25 °C 250 Semiconductor Group 1 07/96 BUZ 100LMAXIMUM RATINGS
Parameter Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Symbol Values -55 ... + 175 -55 ... + 175 ≤ 0.6 ≤ 75 E 55 / 175 / 56 K/W Unit °C Tj Tstg RthJC RthJAELECTRICAL CHARACTERISTICS
, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit V(BR)DSS 50 1.6 0.1 1 10 10 0.014 2 1 100 100 100 V VG...
