Datasheet4U Logo Datasheet4U.com

HYM324025S - 4M x 32-Bit EDO-DRAM Module

General Description

VSS DQ16 DQ17 DQ18 DQ19 N.C.

Key Features

  • specified current load and 100 pF at Vol = 0.8 V and Voh = 2.

📥 Download Datasheet

Full PDF Text Transcription for HYM324025S (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for HYM324025S. For precise diagrams, and layout, please refer to the original PDF.

4M x 32-Bit EDO-DRAM Module HYM 324025S/GS-50/-60 • 4 194 304 words by 32-bit organized SIMM modules for PC main memory applications Fast access and cycle time 50 ns acce...

View more extracted text
for PC main memory applications Fast access and cycle time 50 ns access time 84 ns cycle time (-50 version) 60 ns access time 104 ns cycle time (-60 version) Hyper page mode (EDO) capability 20 ns cycle time (-50 version) 25 ns cycle time (-60 version) Single + 5 V (± 10 %) supply Low power dissipation max. 5280 mW active (HYM 324025S/GS-50) max. 4840 mW active (HYM 324025S/GS-60) CMOS – 44 mW standby TTL –88 mW standby CAS-before-RAS refresh RAS-only-refresh Hidden-refresh 8 decoupling capacitors mounted on substrate All inputs, outputs and clocks fully TTL compatible 72 pin Single in-Line Memory Module with 22.

More Datasheets from Siemens Semiconductor Group (now Infineon)

Part Number Description
HYM324025GS-50 4M x 32-Bit EDO-DRAM Module
HYM324025GS-60 4M x 32-Bit EDO-DRAM Module
HYM324020S 4M x 32-Bit Dynamic RAM Module
HYM324000GD- 4M x 32-Bit Dynamic RAM Module SMALL OUTLINE MEMORY MODULE
HYM321000GS-50 1M x 32-Bit Dynamic RAM Module 2M x 16-Bit Dynamic RAM Module
HYM321000GS-60 1M x 32-Bit Dynamic RAM Module 2M x 16-Bit Dynamic RAM Module
HYM321000S 1M x 32-Bit Dynamic RAM Module 2M x 16-Bit Dynamic RAM Module
HYM321005GS-50 1M x 32-Bit Dynamic RAM Module
HYM321005GS-60 1M x 32-Bit Dynamic RAM Module
HYM321005S 1M x 32-Bit Dynamic RAM Module