2SB139100MA - LOW IR SCHOTTKY BARRIER DIODE

Silan Microelectronics

General Description

Ø Ø 2SB139100MA is a schottky barrier diode chips Lb Due to special schottky barrier structure, the chips have very low reverse leakage current ( typical IR=0.002mA@ Vr=100V ) and maximum 150°C operation junction temperature; Ø Ø Ø Ø Ø Low power losses, high efficiency; Guard ring construction fo

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Datasheet Details

Part number	2SB139100MA
Manufacturer	Silan Microelectronics
File Size	36.78 KB
Description	LOW IR SCHOTTKY BARRIER DIODE
Datasheet	2SB139100MA Datasheet

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2SB139100MA 2SB139100MA LOW IR SCHOTTKY BARRIER DIODE CHIPS DESCRIPTION Ø Ø 2SB139100MA is a schottky barrier diode chips Lb Due to special schottky barrier structure, the chips have very low reverse leakage current ( typical IR=0.002mA@ Vr=100V ) and maximum 150°C operation junction temperature; Ø Ø Ø Ø Ø Low power losses, high efficiency; Guard ring construction for transient protection; High ESD capability; High surge capability; Packaged products are widely used in switching power suppliers, polarity protection circuits and other electronic circuits; Ø Chip Size: 1390µm X 1390µm; Chip Thickness: 280±20µm; Product Name 2SB139100MAYY Specification For Axial leads package Chip Topography and Dimensions La: Chip Size: 1.390mm; Lb: Pad Size: 1.