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7N65FJD2 Datasheet 650v Super Junction Mos Power Transistor

Manufacturer: Silan Microelectronics

Overview: Silan Microelectronics SVS7N65D(F)(MJ)(FJ)D2_Datasheet 7A, 650V SUPER JUNCTION MOS POWER.

This datasheet includes multiple variants, all published together in a single manufacturer document.

Datasheet Details

Part number 7N65FJD2
Manufacturer Silan Microelectronics
File Size 276.40 KB
Description 650V SUPER JUNCTION MOS POWER TRANSISTOR
Datasheet 7N65FJD2 7N65MJD2 Datasheet (PDF)

General Description

SVS7N65D(F)(MJ)(FJ)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology.

It achieves low conduction loss and switching losses.

It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior.

Key Features

  • 2 1 3 12 3 TO-251J-3L 1.Gate 2.Drain 3.Source 13 TO-252-2L.
  • 7A,650V, RDS(on)(typ. )=0.55@VGS=10V.
  • New revolutionary high voltage technology.
  • Ultra low gate charge.
  • Enhanced avalanche capability.
  • Extreme dv/dt rated.
  • High peak current capability 12 3 TO-220FJ-3L 12 3 TO-220F-3L.

7N65FJD2 Distributor

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