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7N65FJD2 - 650V SUPER JUNCTION MOS POWER TRANSISTOR

Download the 7N65FJD2 datasheet PDF. This datasheet also covers the 7N65MJD2 variant, as both devices belong to the same 650v super junction mos power transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

SVS7N65D(F)(MJ)(FJ)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology.

It achieves low conduction loss and switching losses.

Key Features

  • 2 1 3 12 3 TO-251J-3L 1.Gate 2.Drain 3.Source 13 TO-252-2L.
  • 7A,650V, RDS(on)(typ. )=0.55@VGS=10V.
  • New revolutionary high voltage technology.
  • Ultra low gate charge.
  • Enhanced avalanche capability.
  • Extreme dv/dt rated.
  • High peak current capability 12 3 TO-220FJ-3L 12 3 TO-220F-3L.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (7N65MJD2-SilanMicroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number 7N65FJD2
Manufacturer Silan Microelectronics
File Size 276.40 KB
Description 650V SUPER JUNCTION MOS POWER TRANSISTOR
Datasheet download datasheet 7N65FJD2 Datasheet

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7N65 N-CHANNEL MOSFET CHONGQING PINGYANG
7N65 7A 650V N-channel Enhancement Mode Power MOSFET ROUM
7N65 N-CHANNEL POWER MOSFET Unisonic Technologies

Other Datasheets by Silan Microelectronics

Part Number Description
7N65MJD2 650V SUPER JUNCTION MOS POWER TRANSISTOR
7N65RD 650V N-CHANNEL MOSFET
7N65RFJH 650V N-CHANNEL MOSFET
7N65RMJ 650V N-CHANNEL MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Silan Microelectronics SVS7N65D(F)(MJ)(FJ)D2_Datasheet 7A, 650V SUPER JUNCTION MOS POWER TRANSISTOR DESCRIPTION SVS7N65D(F)(MJ)(FJ)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior. Furthermore, it’s universal applicable, for example, it is suitable for hard and soft switching topologies, Lighting, Adapters, etc. FEATURES 2 1 3 12 3 TO-251J-3L 1.Gate 2.Drain 3.Source 13 TO-252-2L  7A,650V, RDS(on)(typ.)=0.