7N65FJD2 Description
SVS7N65D(F)(MJ)(FJ)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior.
7N65FJD2 Key Features
- 7A,650V, RDS(on)(typ.)=0.55@VGS=10V
- New revolutionary high voltage technology
- Ultra low gate charge
- Enhanced avalanche capability
- Extreme dv/dt rated
- High peak current capability