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7N65MJD2 - 650V SUPER JUNCTION MOS POWER TRANSISTOR

General Description

SVS7N65D(F)(MJ)(FJ)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology.

It achieves low conduction loss and switching losses.

Key Features

  • 2 1 3 12 3 TO-251J-3L 1.Gate 2.Drain 3.Source 13 TO-252-2L.
  • 7A,650V, RDS(on)(typ. )=0.55@VGS=10V.
  • New revolutionary high voltage technology.
  • Ultra low gate charge.
  • Enhanced avalanche capability.
  • Extreme dv/dt rated.
  • High peak current capability 12 3 TO-220FJ-3L 12 3 TO-220F-3L.

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Datasheet Details

Part number 7N65MJD2
Manufacturer Silan Microelectronics
File Size 276.40 KB
Description 650V SUPER JUNCTION MOS POWER TRANSISTOR
Datasheet download datasheet 7N65MJD2 Datasheet

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Other Datasheets by Silan Microelectronics

Part Number Description
7N65FJD2 650V SUPER JUNCTION MOS POWER TRANSISTOR
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Silan Microelectronics SVS7N65D(F)(MJ)(FJ)D2_Datasheet 7A, 650V SUPER JUNCTION MOS POWER TRANSISTOR DESCRIPTION SVS7N65D(F)(MJ)(FJ)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior. Furthermore, it’s universal applicable, for example, it is suitable for hard and soft switching topologies, Lighting, Adapters, etc. FEATURES 2 1 3 12 3 TO-251J-3L 1.Gate 2.Drain 3.Source 13 TO-252-2L  7A,650V, RDS(on)(typ.)=0.