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P7N60DD2 - 600V SUPER JUNCTION MOS POWER TRANSISTOR

Download the P7N60DD2 datasheet PDF. This datasheet also covers the P7N60FJDD2 variant, as both devices belong to the same 600v super junction mos power transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

SVSP7N60F(FJD)(D)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology.

It achieves low conduction loss and switching losses.

Key Features

  • 1 3 1.Gate 2.Drain 3.Source 12 3 TO-220F-3L.
  • 7A,600V, RDS(on)(typ. )=0.48@VGS=10V.
  • New revolutionary high voltage technology.
  • Ultra low gate charge.
  • Enhanced avalanche capability.
  • Extreme dv/dt rated.
  • High peak current capability 123 TO-220FJD-3L 13 TO-252-2L.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (P7N60FJDD2-SilanMicroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number P7N60DD2
Manufacturer Silan Microelectronics
File Size 339.82 KB
Description 600V SUPER JUNCTION MOS POWER TRANSISTOR
Datasheet download datasheet P7N60DD2 Datasheet

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Other Datasheets by Silan Microelectronics

Part Number Description
P7N60FD2 600V SUPER JUNCTION MOS POWER TRANSISTOR
P7N60FJDD2 600V SUPER JUNCTION MOS POWER TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Silan Microelectronics SVSP7N60F(FJD)(D)D2_Datasheet 7A, 600V SUPER JUNCTION MOS POWER TRANSISTOR DESCRIPTION 2 SVSP7N60F(FJD)(D)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior. Furthermore, it’s universal applicable, for example, it is suitable for hard and soft switching topologies. FEATURES 1 3 1.Gate 2.Drain 3.Source 12 3 TO-220F-3L  7A,600V, RDS(on)(typ.)=0.