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P7N60FJDD2 - 600V SUPER JUNCTION MOS POWER TRANSISTOR

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Silan Microelectronics

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P7N60FJDD2 600V SUPER JUNCTION MOS POWER TRANSISTOR by Silan Microelectronics - Datasheet Preview — Datasheet preview – P7N60FJDD2

Datasheet Details

Part number	P7N60FJDD2
Manufacturer	Silan Microelectronics
File Size	339.82 KB
Description	600V SUPER JUNCTION MOS POWER TRANSISTOR
Datasheet	P7N60FJDD2 Datasheet
Additional preview pages of the P7N60FJDD2 datasheet.

P7N60FJDD2 Product details

Description

SVSP7N60F(FJD)(D)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology.

It achieves low conduction loss and switching losses.

Features

1 3 1.Gate 2.Drain 3.Source 12 3 TO-220F-3L.
7A,600V, RDS(on)(typ. )=0.48@VGS=10V.
New revolutionary high voltage technology.
Ultra low gate charge.
Enhanced avalanche capability.
Extreme dv/dt rated.
High peak current capability 123 TO-220FJD-3L 13 TO-252-2L.

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Published: Oct 25, 2024 |