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P7N60FJDD2 Datasheet 600v Super Junction Mos Power Transistor

Manufacturer: Silan Microelectronics

Overview: Silan Microelectronics SVSP7N60F(FJD)(D)D2_Datasheet 7A, 600V SUPER JUNCTION MOS POWER.

Datasheet Details

Part number P7N60FJDD2
Manufacturer Silan Microelectronics
File Size 339.82 KB
Description 600V SUPER JUNCTION MOS POWER TRANSISTOR
Datasheet P7N60FJDD2-SilanMicroelectronics.pdf

General Description

2 SVSP7N60F(FJD)(D)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology.

It achieves low conduction loss and switching losses.

It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior.

Key Features

  • 1 3 1.Gate 2.Drain 3.Source 12 3 TO-220F-3L.
  • 7A,600V, RDS(on)(typ. )=0.48@VGS=10V.
  • New revolutionary high voltage technology.
  • Ultra low gate charge.
  • Enhanced avalanche capability.
  • Extreme dv/dt rated.
  • High peak current capability 123 TO-220FJD-3L 13 TO-252-2L.

More Datasheets from Silan Microelectronics

Part Number Description
P7N60FD2 600V SUPER JUNCTION MOS POWER TRANSISTOR
P7N60DD2 600V SUPER JUNCTION MOS POWER TRANSISTOR

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