P7N60FD2 Datasheet | Silan Microelectronics

Silan Microelectronics SVSP7N60F(FJD)(D)D2_Datasheet 7A, 600V SUPER JUNCTION MOS POWER TRANSISTOR DESCRIPTION SVSP7N60F(FJD)(D)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior. Furthermore, it’s universal applicable, for example, it is suitable for hard and soft switching topologies. Features 3 1.Gate 2.Drain 3.Source 12 3 TO-220F-3L - 7A,600V, RDS(on)(typ.)=0.48@VGS=10V - New revolutionary high voltage technology - Ultra low gate...