Datasheet4U Logo Datasheet4U.com

SGM150TL6A9TFD - 650V IGBT

General Description

SGM150TL6A9TFD Module offers the optimum performance for 3-Level-Applications, Solar Applications and UPS Systems.

2.

Key Features

  • 150A, 650V, VCE(sat)(typ. ) =1.7V@IC=150A.
  • VCE(sat) with positive temperature coefficient.
  • High short circuit capability.
  • Low switching loss A9.
  • Low inductive design.
  • With NTC 3.

📥 Download Datasheet

Datasheet Details

Part number SGM150TL6A9TFD
Manufacturer Silan Microelectronics
File Size 244.27 KB
Description 650V IGBT
Datasheet download datasheet SGM150TL6A9TFD Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SGM150TL6A9TFD Datasheet 150A, 650V IGBT MODULE 1.DESCRIPTION SGM150TL6A9TFD Module offers the optimum performance for 3-Level-Applications, Solar Applications and UPS Systems. 2.FEATURES  150A, 650V, VCE(sat)(typ.) =1.7V@IC=150A  VCE(sat) with positive temperature coefficient  High short circuit capability  Low switching loss A9  Low inductive design  With NTC 3.ORDERING INFORMATION Part No. SGM150TL6A9TFD Package A9 4. CIRCUIT DIAGRAM T1 Marking SGM150TL6A9TFD + T2 G1 E1 D5 G2 N E2 D6 G3 E3 G4 E5 T1/D1 T2/D2 T3/D3 T4/D4 - Packing Type Carton HANGZHOU SILAN MICROELECTRONICS CO.,LTD http: //www.silan.com.cn 2024.06.27 Page 1 of 3 3.2 1.8 9.6 9.6 5.PACKAGE OUTLINE A9 0.64 SGM150TL6A9TFD Datasheet UNIT: mm 12 15.6 42.5 3.2 51.0 3.2 16.4 23.0 56.7 48.