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SGM950PB8B3TFM - 750V IGBT

General Description

SGM950PB8B3TFM is a six-cell topology module based on Silan self-developed high-density trench process IGBT chip technology.

Key Features

  • high current density, high short-circuit capability and high blocking voltage level, it provides more reliable guarantee for inverter operation under harsh environmental conditions. 2.

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Datasheet Details

Part number SGM950PB8B3TFM
Manufacturer Silan Microelectronics
File Size 355.01 KB
Description 750V IGBT
Datasheet download datasheet SGM950PB8B3TFM Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SGM950PB8B3TFM Datasheet 950A, 750V IGBT MODULE 1.DESCRIPTION SGM950PB8B3TFM is a six-cell topology module based on Silan self-developed high-density trench process IGBT chip technology. This module is suitable for hybrid and pure electric vehicle applications, it features high current density, high short-circuit capability and high blocking voltage level, it provides more reliable guarantee for inverter operation under harsh environmental conditions. 2. FEATURES  Based on fine trench FS-V technology, blocking voltage up to 750V  Low VCE(sat) with positive temperature coefficient  Low switching loss  Low Qg and Cres  Using DBC with excellent thermal conductivity  Built-in NTC for each phase  Direct water-cooled substrate, low thermal resistance 3.ORDERING INFORMATION Part No.