SGM950PB8B3TFM Description
SGM950PB8B3TFM is a six-cell topology module based on Silan self-developed high-density trench process IGBT chip technology. This module is suitable for hybrid and pure electric vehicle applications,.
SGM950PB8B3TFM Key Features
- Based on fine trench FS-V technology, blocking voltage up to 750V
- Low VCE(sat) with positive temperature coefficient
- Low switching loss
- Low Qg and Cres
- Using DBC with excellent thermal conductivity
- Built-in NTC for each phase
- Direct water-cooled substrate, low thermal resistance
- The operator must put on wrist strap which should be earthed to against electrostatic
- Equipment cases should be earthed
- All tools used during assembly, including soldering tools and solder baths, must be earthed
SGM950PB8B3TFM Applications
- The operator must put on wrist strap which should be earthed to against electrostatic