SGT20N60NPFDF Datasheet | Silan Microelectronics

DESCRIPTION SGT20N60NPFDF using Punch Through IGBT technology, offer the optimum performance for induction Heating, UPS, SMPS and PFC application. FEATURES - 20A, 600V, VCE(sat)(typ.) =1.8V@IC=20A - Low conduction loss - Fast switching - High input impedance - Low Cres/Cies NOMENCLATURE ORDERING INFORMATION Part No. SGT20N60NPFDF Package TO-220F-3L Marking 20N60NPFD Material Halogen free ABSOLUTE MAXIMUM RATINGS (TC = 25°, UNLESS OTHERWISE NOTED) Characteristics Collector to Emitter Voltage Gate to Emitter Voltage Collector Current Pulsed Collector Current TC=25°C TC=100°C Maximum Power Dissipation (TC=25°C) -Derate above 25°C Operating Junction Temperature Range Storage Temperature Range Symbol VCE VGE TJ Tstg Ratings 600 ±20 40 20 80 32 0.23 -55～+150 -55～+150 HANGZHOU SILAN MICROELECTRONICS CO.,LTD http: //.silan..cn Packing Tube Units V V A A W W/°C °C °C Rev.:1.2 Page 1 of 7 Silan...