SGT20T135QR1PN Datasheet | Silan Microelectronics

DESCRIPTION SGT20T135QR1P7/PN/PT inverse IGBT employs Silan new Reverse Conducting technology, features low conduction loss, low switching loss, high breakdown voltage, internal Freewheeling diode, positive/negative temperature coefficient. It is suitable for Induction heating field. FEATURES - 20A, 1350V, VCE(sat)(typ.)=1.8V@IC=20A - Low conduction loss - Internal freewheeling diode - High breakdown voltage C 2 1 G 3 E 123 TO-247-3L 1 2 3 TO-3PN TO-3P NOMENCLATURE IGBT series Current, 70: 70A SGT 20 T 135 Q R X 1 P7 N: N channel NE: N channel planar gate with ESD T: Field Stop 3/4 U: Field Stop 4+ V: Field Stop 5 W: Field Stop 6 X: Field Stop 7 Voltage, 65: 650V, 120: 1200V Package, P7: TO-247-3L F: TO-220F-3L 1,2,3… : version No. Blank: Standard M: Standard, Full range R: Rapid B: Rapid, Full range S: Soft, Full range D: Packaged with diode R: Integrated diode (RC IGBT) L : Ultra low switching, remended frequency ~2KHz Q : Low switching, remended frequency2~20K S : STandard frequency, remended frequency5~40K F : Fast switching, remended frequency10~60K UF : Ultra fast switching, remended frequency 40K~ ORDERING INFORMATION Part No. SGT20T135QR1P7 SGT20T135QR1PN SGT20T135QR1PT Package TO-247-3L TO-3P TO-3PN Marking 20T135QR1 20T135QR 20T135QR Hazardous Substance Control Pb free Pb free Pb free Packing Type Tube Tube Tube HANGZHOU SILAN MICROELECTRONICS CO.,LTD http: //.silan..cn Rev.:1.7 Page 1 of 9 Silan Microelectronics SGT20T135QR1P7(PN)(PT)_Datasheet ABSOLUTE MAXIMUM RATINGS (TC=25°C, UNLESS OTHERWISE...