SGT20T135QR1PN Overview
SGT20T135QR1P7/PN/PT inverse IGBT employs Silan new Reverse Conducting technology,.
SGT20T135QR1PN Key Features
- 20A, 1350V, VCE(sat)(typ.)=1.8V@IC=20A
- Low conduction loss
- Internal freewheeling diode
- High breakdown voltage
This datasheet includes multiple variants, all published together in a single manufacturer document.
| Part number | SGT20T135QR1PN |
|---|---|
| Datasheet | SGT20T135QR1PN SGT20T135QR1P7 Datasheet (PDF) |
| File Size | 272.07 KB |
| Manufacturer | Silan Microelectronics |
| Description | 1350V INVERSE IGBT |
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SGT20T135QR1P7/PN/PT inverse IGBT employs Silan new Reverse Conducting technology,.
See all Silan Microelectronics datasheets
| Part Number | Description |
|---|---|
| SGT20T135QR1P7 | 1350V INVERSE IGBT |
| SGT20T135QR1PT | 1350V INVERSE IGBT |
| SGT20T60SD1F | 600V FIELD STOP IGBT |
| SGT20T60SD1FD | 600V FIELD STOP IGBT |
| SGT20T60SD1P7 | 600V FIELD STOP IGBT |
| SGT20T60SD1PN | 600V FIELD STOP IGBT |
| SGT20T60SD1S | 600V FIELD STOP IGBT |
| SGT20T60SD1T | 600V FIELD STOP IGBT |
| SGT20T60SDM1P7 | 600V FIELD STOP IGBT |
| SGT20N60NPFDF | 600V IGBT |