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SGT20T135QR1PN - 1350V INVERSE IGBT

Download the SGT20T135QR1PN datasheet PDF. This datasheet also covers the SGT20T135QR1P7 variant, as both devices belong to the same 1350v inverse igbt family and are provided as variant models within a single manufacturer datasheet.

General Description

SGT20T135QR1P7/PN/PT inverse IGBT employs Silan new Reverse Conducting technology,

Key Features

  • low conduction loss, low switching loss, high breakdown voltage, internal Freewheeling diode, positive/negative temperature coefficient. It is suitable for Induction heating field.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (SGT20T135QR1P7-SilanMicroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number SGT20T135QR1PN
Manufacturer Silan Microelectronics
File Size 272.07 KB
Description 1350V INVERSE IGBT
Datasheet download datasheet SGT20T135QR1PN Datasheet

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Other Datasheets by Silan Microelectronics

Part Number Description
SGT20T135QR1P7 1350V INVERSE IGBT
SGT20T135QR1PT 1350V INVERSE IGBT
SGT20T60SD1F 600V FIELD STOP IGBT
SGT20T60SD1FD 600V FIELD STOP IGBT
SGT20T60SD1P7 600V FIELD STOP IGBT

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Silan Microelectronics SGT20T135QR1P7(PN)(PT)_Datasheet 20A, 1350V INVERSE IGBT DESCRIPTION SGT20T135QR1P7/PN/PT inverse IGBT employs Silan new Reverse Conducting technology, features low conduction loss, low switching loss, high breakdown voltage, internal Freewheeling diode, positive/negative temperature coefficient. It is suitable for Induction heating field. FEATURES  20A, 1350V, VCE(sat)(typ.)=1.