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SGT20T135QR1P7 - 1350V INVERSE IGBT

General Description

SGT20T135QR1P7/PN/PT inverse IGBT employs Silan new Reverse Conducting technology,

Key Features

  • low conduction loss, low switching loss, high breakdown voltage, internal Freewheeling diode, positive/negative temperature coefficient. It is suitable for Induction heating field.

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Datasheet Details

Part number SGT20T135QR1P7
Manufacturer Silan Microelectronics
File Size 272.07 KB
Description 1350V INVERSE IGBT
Datasheet download datasheet SGT20T135QR1P7 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Silan Microelectronics SGT20T135QR1P7(PN)(PT)_Datasheet 20A, 1350V INVERSE IGBT DESCRIPTION SGT20T135QR1P7/PN/PT inverse IGBT employs Silan new Reverse Conducting technology, features low conduction loss, low switching loss, high breakdown voltage, internal Freewheeling diode, positive/negative temperature coefficient. It is suitable for Induction heating field. FEATURES  20A, 1350V, VCE(sat)(typ.)=1.