SGT20T135QR1P7 Description
SGT20T135QR1P7/PN/PT inverse IGBT employs Silan new Reverse Conducting technology,.
SGT20T135QR1P7 Key Features
- 20A, 1350V, VCE(sat)(typ.)=1.8V@IC=20A
- Low conduction loss
- Internal freewheeling diode
- High breakdown voltage
SGT20T135QR1P7 is 1350V INVERSE IGBT manufactured by Silan Microelectronics.
| Part Number | Description |
|---|---|
| SGT20T135QR1PN | 1350V INVERSE IGBT |
| SGT20T135QR1PT | 1350V INVERSE IGBT |
| SGT20T60SD1F | 600V FIELD STOP IGBT |
| SGT20T60SD1FD | 600V FIELD STOP IGBT |
| SGT20T60SD1P7 | 600V FIELD STOP IGBT |
SGT20T135QR1P7/PN/PT inverse IGBT employs Silan new Reverse Conducting technology,.