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SGT30T60SD1F - 600V FIELD STOP IGBT

General Description

The SGT30T60SD1F(FD) field stop IGBT adopts Silan Field Stop III technology,

Key Features

  • low conduction loss and switching loss, is applicable to UPS, SMPS and PFC fields.

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Datasheet Details

Part number SGT30T60SD1F
Manufacturer Silan Microelectronics
File Size 519.92 KB
Description 600V FIELD STOP IGBT
Datasheet download datasheet SGT30T60SD1F Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Silan Microelectronics SGT30T60SD1F(FD)_Datasheet 30A, 600V FIELD STOP IGBT DESCRIPTION The SGT30T60SD1F(FD) field stop IGBT adopts Silan Field Stop III technology, features low conduction loss and switching loss, is applicable to UPS, SMPS and PFC fields. FEATURES  30A, 600V, VCE(sat)(typ.)=1.65V@IC=30A  Low conduction loss  Fast switching  High input impedance C 2 1 G 3 E 123 123 TO-220F-3L TO-220FD-3L NOMENCLATURE IGBT series SGT 30 T 60 S D 1 F Current, 30: 30A N : N-channel NE : N-channel planner gate with ESD T : Field Stop 3/4 U : Field Stop 4+ V : Field Stop 5 W: Field Stop 5+ Y : Field Stop5++ A : Field Stop 6 Voltage, 60: 600V 120: 1200V Package F: TO-220F-3L 1,2,3 : Version No.