SGT30T60SDM1P7 - 600V FIELD STOP IGBT

Silan Microelectronics

General Description

SGT30T60SDM1P7 adopts Field Stop III IGBT technology, offer the optimum performance for induction Heating, UPS, SMPS and PFC application.

Key Features

30A, 600V, VCE(sat)(typ. )=1.65V@IC=30A.
Low conduction loss.
Fast switching.
High input impedance C 2 1 G 3 E TO-247-3L.

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SGT30T60SDM1P7 600v field stop igbt by Silan Microelectronics - Datasheet Preview

Datasheet Details

Part number	SGT30T60SDM1P7
Manufacturer	Silan Microelectronics
File Size	362.95 KB
Description	600V FIELD STOP IGBT
Datasheet	SGT30T60SDM1P7 Datasheet

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Silan Microelectronics SGT30T60SDM1P7_Datasheet 30A, 600V FIELD STOP IGBT DESCRIPTION SGT30T60SDM1P7 adopts Field Stop III IGBT technology, offer the optimum performance for induction Heating, UPS, SMPS and PFC application. FEATURES  30A, 600V, VCE(sat)(typ.)=1.65V@IC=30A  Low conduction loss  Fast switching  High input impedance C 2 1 G 3 E TO-247-3L NOMENCLATURE IGBT series Current, 70: 70A N : N Channel NE : N-channel planar gate with ESD T : Field Stop 3/4 U : Field Stop 4+ V : Field Stop 5 W: Field Stop 6 X : Field Stop 7 Voltage, 65: 650V 120: 1200V SGT 30 T 60 S D M 1 P7 Package P7 : TO-247-3L F: TO-220F-3L 1,2,3… : Version No.