SGT30T60SDM1P7 Datasheet | Silan Microelectronics

Silan Microelectronics SGT30T60SDM1P7_Datasheet 30A, 600V FIELD STOP IGBT DESCRIPTION SGT30T60SDM1P7 adopts Field Stop III IGBT technology, offer the optimum performance for induction Heating, UPS, SMPS and PFC application. Features - 30A, 600V, VCE(sat)(typ.)=1.65V@IC=30A - Low conduction loss - Fast switching - High input impedance C 2 1 G 3 TO-247-3L NOMENCLATURE IGBT series Current, 70: 70A N : N Channel NE : N-channel planar gate with ESD T : Field Stop 3/4 U : Field Stop 4+ V : Field Stop 5 W: Field Stop 6 X : Field Stop 7 Voltage, 65: 650V 120: 1200V SGT 30 T 60 S D M 1 P7 Package P7 : TO-247-3L F: TO-220F-3L 1,2,3… : Version No. Blank: Standard diode M : Standard Diode,...