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Silan Microelectronics
SGT30T60SD1F(FD)_Datasheet
30A, 600V FIELD STOP IGBT
DESCRIPTION
The SGT30T60SD1F(FD) field stop IGBT adopts Silan Field Stop III technology, features low conduction loss and switching loss, is applicable to UPS, SMPS and PFC fields.
FEATURES
30A, 600V, VCE(sat)(typ.)=1.65V@IC=30A Low conduction loss Fast switching High input impedance
C 2
1 G
3 E
123
123
TO-220F-3L TO-220FD-3L
NOMENCLATURE
IGBT series
SGT 30 T 60 S D 1 F
Current, 30: 30A
N : N-channel NE : N-channel planner gate with ESD T : Field Stop 3/4 U : Field Stop 4+ V : Field Stop 5 W: Field Stop 5+ Y : Field Stop5++ A : Field Stop 6
Voltage, 60: 600V 120: 1200V
Package F: TO-220F-3L
1,2,3 : Version No.