SGT30T60SD1FD Datasheet | Silan Microelectronics

Silan Microelectronics SGT30T60SD1F(FD)_Datasheet 30A, 600V FIELD STOP IGBT DESCRIPTION The SGT30T60SD1F(FD) field stop IGBT adopts Silan Field Stop III technology, Features low conduction loss and switching loss, is applicable to UPS, SMPS and PFC fields. Features - 30A, 600V, VCE(sat)(typ.)=1.65V@IC=30A - Low conduction loss - Fast switching - High input impedance C 2 1 G 3 E TO-220F-3L TO-220FD-3L NOMENCLATURE IGBT series SGT 30 T 60 S D 1 F Current, 30: 30A N : N-channel NE : N-channel planner gate with ESD T : Field Stop 3/4 U : Field Stop 4+ V : Field Stop 5 W: Field Stop 5+ Y : Field Stop5++ A : Field Stop 6 Voltage, 60: 600V 120: 1200V Package F: TO-220F-3L 1,2,3...