STS65R360DS2 - 650V SUPER JUNCTION MOS POWER TRANSISTOR

Product Overview

Silan Microelectronics

Part number	STS65R360DS2
Manufacturer	Silan Microelectronics
File Size	555.03 KB
Description	650V SUPER JUNCTION MOS POWER TRANSISTOR
Datasheet	STS65R360DS2 Datasheet
Additional preview pages of the STS65R360DS2 datasheet.

STS65R360D(F)(S)S2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology.

12A, 650V, RDS(on)(typ. )=0.3Ω@VGS=10V.
New revolutionary high voltage technology.
Ultra low gate charge.
Periodic avalanche rated.
Extreme dv/dt rated.
High peak current capability.
100% avalanche tested.
Pb-free lead plating.
RoHS compliant 2 1 3 1.Gate 2.Drain 3.Source 13 TO-252-2L 1 3 TO-263-2L 12 3 TO-220F-3L KEY.

📁 Similar Datasheet

STS6308 - N-Channel MOSFET (SamHop Microelectronics)
STS6409 - P-Channel Enhancement Mode Field Effect Transistor (SamHop Microelectronics)
STS6415 - P-Channel Enhancement Mode Field Effect Transistor (SamHop Microelectronics)
STS6601 - P-Channel Enhancement Mode Field Effect Transistor (SamHop Microelectronics)
STS6604L - Dual Enhancement Mode Field Effect Transistor (SamHop)
STS6DNF30L - DUAL N - CHANNEL POWER MOSFET (STMicroelectronics)
STS6DNF30V - DUAL N - CHANNEL POWER MOSFET (STMicroelectronics)
STS6N20 - N-Channel MOSFET (SamHop Microelectronics)

Other Datasheets by Silan Microelectronics

Published: Mar 17, 2025 |