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STS65R360SS2 - 650V SUPER JUNCTION MOS POWER TRANSISTOR

This page provides the datasheet information for the STS65R360SS2, a member of the STS65R360DS2 650V SUPER JUNCTION MOS POWER TRANSISTOR family.

Datasheet Summary

Description

STS65R360D(F)(S)S2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology.

It achieves low conduction loss and switching losses.

Features

  • 12A, 650V, RDS(on)(typ. )=0.3Ω@VGS=10V.
  • New revolutionary high voltage technology.
  • Ultra low gate charge.
  • Periodic avalanche rated.
  • Extreme dv/dt rated.
  • High peak current capability.
  • 100% avalanche tested.
  • Pb-free lead plating.
  • RoHS compliant 2 1 3 1.Gate 2.Drain 3.Source 13 TO-252-2L 1 3 TO-263-2L 12 3 TO-220F-3L KEY.

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Datasheet preview – STS65R360SS2

Datasheet Details

Part number STS65R360SS2
Manufacturer Silan Microelectronics
File Size 555.03 KB
Description 650V SUPER JUNCTION MOS POWER TRANSISTOR
Datasheet download datasheet STS65R360SS2 Datasheet
Additional preview pages of the STS65R360SS2 datasheet.

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Full PDF Text Transcription

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Silan Microelectronics STS65R360D(F)(S)S2_Datasheet 12A, 650V SUPER JUNCTION MOS POWER TRANSISTOR DESCRIPTION STS65R360D(F)(S)S2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior. Furthermore, it’s universal applicable, i.e., suitable for hard and soft switching topologies. FEATURES  12A, 650V, RDS(on)(typ.)=0.3Ω@VGS=10V  New revolutionary high voltage technology  Ultra low gate charge  Periodic avalanche rated  Extreme dv/dt rated  High peak current capability  100% avalanche tested  Pb-free lead plating  RoHS compliant 2 1 3 1.
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