STS65R360FS2 - 650V SUPER JUNCTION MOS POWER TRANSISTOR

This page provides the datasheet information for the STS65R360FS2, a member of the STS65R360DS2 650V SUPER JUNCTION MOS POWER TRANSISTOR family.

Product Overview

Silan Microelectronics

Part number	STS65R360FS2
Manufacturer	Silan Microelectronics
File Size	555.03 KB
Description	650V SUPER JUNCTION MOS POWER TRANSISTOR
Datasheet	STS65R360FS2 Datasheet
Additional preview pages of the STS65R360FS2 datasheet.

STS65R360D(F)(S)S2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology.

It achieves low conduction loss and switching losses.

12A, 650V, RDS(on)(typ. )=0.3Ω@VGS=10V.
New revolutionary high voltage technology.
Ultra low gate charge.
Periodic avalanche rated.
Extreme dv/dt rated.
High peak current capability.
100% avalanche tested.
Pb-free lead plating.
RoHS compliant 2 1 3 1.Gate 2.Drain 3.Source 13 TO-252-2L 1 3 TO-263-2L 12 3 TO-220F-3L KEY.

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Published: Mar 17, 2025 |