SVD640D Key Features
- 18A,200V,RDS(on)(typ.)=0.12@VGS=10V
- Low gate charge
- Low Crss
- Fast switching
- Improved dv/dt capability
- Part: SVD640D
- Manufacturer: Silan Microelectronics
- Size: 363.68 KB
Related Silan Microelectronics Datasheets
| Part Number | Description |
|---|---|
| SVD640F | 200V N-CHANNEL MOSFET |
| SVD640S | 200V N-CHANNEL MOSFET |
| SVD640T | 200V N-CHANNEL MOSFET |
| SVD1055SA | 55V N/P-CHANNEL MOSFET |
| SVD10N60F | 600V N-CHANNEL MOSFET |
SVD640D Description
SVD640T/D/S is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-RinTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are widely used in AC-DC power...