SVD640F
DESCRIPTION
SVD640T/D/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-Rin TM structure middle/low-voltage VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers.
FEATURES
- 18A,200V,RDS(on)(typ.)=0.12Ω@VGS=10V
- Low gate charge
- Low Crss
- Fast switching
- Improved dv/dt capability
ORDERING INFORMATION
Part No. SVD640T SVD640D SVD640DTR SVD640F
Package TO-220-3L TO-252-2L TO-252-2L TO-220F-3L
Marking SVD640T SVD640D SVD640D SVD640F
Material Pb free Halogen free Halogen free Pb free
Packing Tube Tube
Tape & Reel Tube
ABSOLUTE MAXIMUM RATINGS (Tc=25°C unless otherwise noted)
Characteristics
Drain-Source...
