SVD640S
DESCRIPTION
SVD640T/D/S is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-Rin TM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are widely used in AC-DC power supplies, DC-DC converters and H-bridge PWM motor drivers.
2 1
1.Gate 2.Drain 3.Source
TO-263-2L
FEATURES
- 18A,200V,RDS(on)(typ.)=0.12@VGS=10V
- Low gate charge
- Low Crss
- Fast switching
- Improved dv/dt capability
1 23
TO-220-3L
1 3
TO-252-2L
ORDERING INFORMATION
Part No. SVD640T SVD640D SVD640DTR SVD640S SVD640STR
Package TO-220-3L TO-252-2L TO-252-2L TO-263-2L TO-263-2L
Marking SVD640T SVD640D SVD640D SVD640S SVD640S
Hazardous Substance Control Pb free
Halogen free Halogen free Halogen free Halogen free
Packing Type Tube Tube
Tape&Reel...
