SVDP2353PL3A Overview
L=1mH,IAS=-7.0A,VDD=-80V,VGS=-10V,开始温度 TJ=25C; 3. 脉冲测试:脉冲宽度≤300μs,占空比≤2%; 4. //.silan..cn 版本号:1.8 共8页 第2页 士兰微电子 典型特性曲线 图.
SVDP2353PL3A datasheet by Silan Microelectronics.
| Part number | SVDP2353PL3A |
|---|---|
| Datasheet | SVDP2353PL3A-SilanMicroelectronics.pdf |
| File Size | 329.24 KB |
| Manufacturer | Silan Microelectronics |
| Description | -150V P-channel enhanced mode field-effect transistor |
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L=1mH,IAS=-7.0A,VDD=-80V,VGS=-10V,开始温度 TJ=25C; 3. 脉冲测试:脉冲宽度≤300μs,占空比≤2%; 4. //.silan..cn 版本号:1.8 共8页 第2页 士兰微电子 典型特性曲线 图.
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