Datasheet4U Logo Datasheet4U.com

SVF10N70FJ - 700V N-CHANNEL MOSFET

This page provides the datasheet information for the SVF10N70FJ, a member of the SVF10N70F 700V N-CHANNEL MOSFET family.

Datasheet Summary

Description

SVF10N70F/FJ is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology.

Features

  • 10A,700V,RDS(on)(typ. )=0.95@VGS=10V.
  • Low gate charge.
  • Low Crss.
  • Fast switching.
  • Improved dv/dt capability.

📥 Download Datasheet

Datasheet preview – SVF10N70FJ

Datasheet Details

Part number SVF10N70FJ
Manufacturer Silan Microelectronics
File Size 283.46 KB
Description 700V N-CHANNEL MOSFET
Datasheet download datasheet SVF10N70FJ Datasheet
Additional preview pages of the SVF10N70FJ datasheet.

📁 Similar Datasheet

Other Datasheets by Silan Microelectronics

Full PDF Text Transcription

Click to expand full text
Silan Microelectronics SVF10N70F/FJ_Datasheet 10A, 700V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF10N70F/FJ is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power supplies, DC-DC converters and H-bridge PWM motor drivers. FEATURES  10A,700V,RDS(on)(typ.)=0.95@VGS=10V  Low gate charge  Low Crss  Fast switching  Improved dv/dt capability NOMENCLATURE 2 1 3 1.Gate 2.Drain 3.
Published: |