SVF10N70FJ Datasheet | Silan Microelectronics

Silan Microelectronics SVF10N70F/FJ_Datasheet 10A, 700V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF10N70F/FJ is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-Cell TM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are widely used in AC-DC power supplies, DC-DC converters and H-bridge PWM motor drivers. Features - 10A,700V,RDS(on)(typ.)=0.95@VGS=10V - Low gate charge - Low Crss - Fast switching - Improved dv/dt capability NOMENCLATURE 1 3 1.Gate 2.Drain 3.Source 123 TO-220F-3L 123 TO-220FJ-3L SVFXNEXXX Silan VDMOS Code of F-Cell process Nominal current,using 1 or 2 digits: Example:4 denotes 4A, 10 denotes 10A, 08 denotes 0.8A N denotes N Channel Package information. Example: F:TO-220F Nominal Voltage,using 2 digits Example: 60 denotes 600V, 65 denotes 650V. Special Features indication, May be omitted. Example: E denotes embeded ESD structure ORDERING INFORMATION Part No. SVF10N70F SVF10N70FJ Package TO-220F-3L TO-220FJ-3L Marking SVF10N70F...