SVF10N80F Datasheet | Silan Microelectronics

Silan Microelectronics SVF10N80F/K_Datasheet 10A, 800V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF10N80F/K is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-Cell TM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are widely used in AC-DC power supplies, DC-DC converters and H-bridge PWM motor drivers. Features - 10A,800V,RDS(on)(typ.)=0.92@VGS=10V - Low gate charge - Low Crss - Fast switching - Improved dv/dt capability ORDERING INFORMATION Part No. SVF10N80F SVF10N80K Package TO-220F-3L TO-262-3L Marking SVF10N80F SVF10N80K 1 3 1.Gate 2.Drain 3.Source 12 3 TO-220F-3L 12 3 TO-262-3L Hazardous Substance Control Pb free Pb free Packing Type Tube Tube HANGZHOU SILAN MICROELECTRONICS CO.,LTD http: //.silan..cn Rev.:1.6 Page 1 of...