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SVF12N65CFJ - 650V N-CHANNEL MOSFET

General Description

SVF12N65CFJ is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology.

Key Features

  • 1B.
  • 12A,650V,RDS(on)(typ. )=0.64Ω@VGS=10V.
  • Low gate charge.
  • Low Crss.
  • Fast switching.
  • Improved dv/dt capability.

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Datasheet Details

Part number SVF12N65CFJ
Manufacturer Silan Microelectronics
File Size 266.50 KB
Description 650V N-CHANNEL MOSFET
Datasheet download datasheet SVF12N65CFJ Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SVF12N65CFJ_Datasheet 12A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION 0B SVF12N65CFJ is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power supplies, DC-DC converters and H-bridge PWM motor drivers. FEATURES 1B  12A,650V,RDS(on)(typ.)=0.64Ω@VGS=10V  Low gate charge  Low Crss  Fast switching  Improved dv/dt capability NOMENCLATURE ORDERING INFORMATION Part No.