SVF12N65RF
Description
The SVF12N65RF(FJH) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode.
Key Features
- Example: FJH: TO-220FJH; F:TO-220F Version Nominal current, using 1 or 2 digits
- Example: 4 denotes 4A N denotes N channel Nominal voltage, using 2 digits
- Example: 60 denotes 600V
