SVF12N65RFJH Overview
The SVF12N65RF(FJH) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are widely used in AC-DC...
SVF12N65RFJH Key Features
- 12A, 650V, RDS(on)(typ.)= 0.64@VGS=10V
- Low gate charge
- Low Crss
- Fast switching
- Improved dv/dt capability