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SVF3878AP7 Datasheet 900v N-channel MOSFET

Manufacturer: Silan Microelectronics

Overview: Silan Microelectronics SVF3878AP7_Datasheet 9A, 900V N-CHANNEL.

General Description

SVF3878AP7 is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology.

The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode.

These devices are widely used in AC-DC power supplies, DC-DC converters and H-bridge PWM motor drivers.

Key Features

  • 9A, 900V, RDS(on) (typ. )=1. 0@VGS=10V.
  • Low gate charge.
  • Low Crss.
  • Fast switching.
  • Improved dv/dt capability 2. Drain 1. Gate 3. Source 12 3 TO-247-3L.

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