SVF3878PN Datasheet | Silan Microelectronics

SVF3878PN_Datasheet 9A, 900V N-CHANNEL MOSFET DESCRIPTION SVF3878PN is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers. Features - 9A, 900V, RDS(on) (typ.)=1. 0Ω@VGS=10V - Low gate charge - Low Crss - Fast switching - Improved dv/dt capability ORDERING...