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SVF3878PN - 900V N-CHANNEL MOSFET

Datasheet Summary

Description

SVF3878PN is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology.

Features

  • 9A, 900V, RDS(on) (typ. )=1. 0Ω@VGS=10V.
  • Low gate charge.
  • Low Crss.
  • Fast switching.
  • Improved dv/dt capability.

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Datasheet Details

Part number SVF3878PN
Manufacturer Silan Microelectronics
File Size 227.16 KB
Description 900V N-CHANNEL MOSFET
Datasheet download datasheet SVF3878PN Datasheet
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SVF3878PN_Datasheet 9A, 900V N-CHANNEL MOSFET DESCRIPTION SVF3878PN is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers. FEATURES  9A, 900V, RDS(on) (typ.)=1. 0Ω@VGS=10V  Low gate charge  Low Crss  Fast switching  Improved dv/dt capability ORDERING INFORMATION Part No.
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