SVF3878P7 Datasheet | Silan Microelectronics

Silan Microelectronics SVF3878P7_Datasheet 9A, 900V N-CHANNEL MOSFET DESCRIPTION SVF3878P7 is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are widely used in AC-DC power supplies, DC-DC converters and H-bridge PWM motor drivers. 1 3 1.Gate 2.Drain 3.Source Features - 9A, 900V, RDS(on) (typ.)=1. 0@VGS=10V - Low gate charge - Low Crss - Fast switching -...