SVF3878P7 - 900V N-CHANNEL MOSFET

Silan Microelectronics

Download the SVF3878P7 datasheet PDF. This datasheet also covers the SVF3878P7-SilanMicroelectronics variant, as both devices belong to the same 900v n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

SVF3878P7 is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology.

Key Features

9A, 900V, RDS(on) (typ. )=1. 0@VGS=10V.
Low gate charge.
Low Crss.
Fast switching.
Improved dv/dt capability 12 3 TO-247-3L.

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SVF3878P7 900v n-channel mosfet by Silan Microelectronics - Datasheet Preview — Note: The manufacturer provides a single datasheet file (SVF3878P7-SilanMicroelectronics_removed.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	SVF3878P7
Manufacturer	Silan Microelectronics
File Size	288.45 KB
Description	900V N-CHANNEL MOSFET
Datasheet	SVF3878P7 Datasheet

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Other Datasheets by Silan Microelectronics

Part Number	Description
SVF3878PN	900V N-CHANNEL MOSFET
SVF3878AP7	900V N-CHANNEL MOSFET
SVF31N30CS	300V N-channel enhanced mode field-effect transistor
SVF3N50D	MOSFET
SVF3N80D	800V N-CHANNEL MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

Silan Microelectronics SVF3878P7_Datasheet 9A, 900V N-CHANNEL MOSFET DESCRIPTION SVF3878P7 is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power supplies, DC-DC converters and H-bridge PWM motor drivers. 2 1 3 1.Gate 2.Drain 3.Source FEATURES  9A, 900V, RDS(on) (typ.)=1. 0@VGS=10V  Low gate charge  Low Crss  Fast switching  Improved dv/dt capability 12 3 TO-247-3L ORDERING INFORMATION Part No.