SVF6N80AF Description
SVF6N80AD(K)(F) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are...
SVF6N80AF Key Features
- 6A,800V,RDS(on)(typ.)=1.9@VGS=10V
- Low gate charge
- Low Crss
- Fast switching
- Improved dv/dt capability