SVF6N80AF Datasheet | Silan Microelectronics

Silan Microelectronics SVF6N80AD(K)(F)_Datasheet 6A, 800V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF6N80AD(K)(F) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-Cell TM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers. Features - 6A,800V,RDS(on)(typ.)=1.9@VGS=10V - Low gate charge - Low Crss - Fast switching - Improved dv/dt capability ORDERING INFORMATION Part No. SVF6N80ADTR SVF6N80AK SVF6N80AF Package TO-252-2L TO-262-3L TO-220F-3L Marking 6N80AD SVF6N80AK SVF6N80AF 1 3 1.Gate 2.Drain 3.Source 12 3 TO-220F-3L TO-252-2L 12 3 TO-262-3L Hazardous Substance Control Halogen free Pb free Pb free Packing Type Tape&Reel Tube Tube HANGZHOU SILAN MICROELECTRONICS CO.,LTD http:...