SVF6N80K - 800V N-CHANNEL MOSFET

Silan Microelectronics

Download the SVF6N80K datasheet PDF. This datasheet also covers the SVF6N80D variant, as both devices belong to the same 800v n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

SVF6N80D(K)(MJ) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology.

Key Features

6A,800V, RDS(on)(typ. )=2.0@VGS=10V.
Low gate charge.
Low Crss.
Fast switching.
Improved dv/dt capability 13 TO-252-2L 12 3 TO-262-3L.

📥 Download Datasheet

SVF6N80K 800v n-channel mosfet by Silan Microelectronics - Datasheet Preview — Note: The manufacturer provides a single datasheet file (SVF6N80D-SilanMicroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	SVF6N80K
Manufacturer	Silan Microelectronics
File Size	279.72 KB
Description	800V N-CHANNEL MOSFET
Datasheet	SVF6N80K Datasheet

Other Datasheets by Silan Microelectronics

Part Number	Description
SVF6N80AD	800V N-CHANNEL MOSFET
SVF6N80AF	800V N-CHANNEL MOSFET
SVF6N80AK	800V N-CHANNEL MOSFET
SVF6N80D	800V N-CHANNEL MOSFET
SVF6N80MJ	800V N-CHANNEL MOSFET
SVF6N25CD	250V N-channel enhanced mode field-effect transistor
SVF6N60D	MOSFET
SVF6N60F	MOSFET
SVF6N60FQ	600V N-CHANNEL MOSFET
SVF6N60MJ	MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

Silan Microelectronics SVF6N80D(K)_Datasheet 6A, 800V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF6N80D(K)(MJ) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power supplies, DC-DC converters and H-bridge PWM motor drivers. 2 1 3 1.Gate 2.Drain 3.Source 12 3 TO-251J-3L FEATURES  6A,800V, RDS(on)(typ.)=2.