SVF6N80MJ Datasheet | Silan Microelectronics

Silan Microelectronics SVF6N80D(K)_Datasheet 6A, 800V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF6N80D(K)(MJ) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-Cell TM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are widely used in AC-DC power supplies, DC-DC converters and H-bridge PWM motor drivers. 1 3 1.Gate 2.Drain 3.Source 12 3 TO-251J-3L Features - 6A,800V, RDS(on)(typ.)=2.0@VGS=10V - Low gate charge - Low Crss - Fast switching - Improved dv/dt capability TO-252-2L 12 3 TO-262-3L ORDERING INFORMATION Part No. SVF6N80DTR SVF6N80K SVF6N80MJ Package TO-252-2L TO-262-3L TO-251J-3L Marking SVF6N80D SVF6N80K SVF6N80MJ Hazardous Substance Control Halogen free Pb free Halogen free Packing Type Tape&Reel Tube Tube HANGZHOU SILAN MICROELECTRONICS CO.,LTD http: //.silan..cn Rev.:1.3 Page 1 of 9 Silan Microelectronics SVF6N80D(K)_Datasheet...