SVF9N90F Datasheet | Silan Microelectronics

SVF9N90F/PN_Datasheet 9A, 900V N-CHANNEL MOSFET DESCRIPTION SVF9N90F/PN is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-Cell TM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are widely used in AC-DC power suppliers, DCDC converters and H-bridge PWM motor drivers. Features ∗ 9A, 900V, RDS(on) (typ.)=1.10Ω@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt capability NOMENCLATURE ORDERING INFORMATION Part No. SVF9N90F SVF9N90PN Package TO-220F-3L TO-3PN Marking SVF9N90F 9N90 Material Pb free Pb free Packing Tube Tube HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http://.silan..cn REV:1.0 2012.05.30 Page 1 of 8 SVF9N90F/PN_Datasheet...