SVF9NE80F Datasheet | Silan Microelectronics

SVF9NE80F_Datasheet 9A, 800V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF9NE80F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-Cell TM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are widely used in AC-DC power suppliers, DCDC converters and H-bridge PWM motor drivers. Features ∗ 9A,800V,RDS(on)(typ.)=0.78Ω@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt capability NOMENCLATURE ORDERING INFORMATION Part No. SVF9NE80F Package TO-220F-3L Marking SVF9NE80F Material Pb free Packing Tube HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http://.silan..cn REV:0.3 2011.11.23 Page 1 of 5 SVF9NE80F_Datasheet...