SVG076R5NT Description
SVG076R5NT(S)(D)(KL) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance. This device is widely used in UPS, Power Management for Inverter Systems.
SVG076R5NT Key Features
- 100A, 70V, RDS(on)(typ.)=5.4m@VGS=10V
- Low gate charge
- Low Crss
- Fast switching
- Improved dv/dt capability