SVG076R5NT Datasheet | Silan Microelectronics

Silan Microelectronics SVG076R5NT(S)(D)(KL)_Datasheet 100A, 70V N-CHANNEL MOSFET DESCRIPTION SVG076R5NT(S)(D)(KL) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance. This device is widely used in UPS, Power Management for Inverter Systems. Features - 100A, 70V, RDS(on)(typ.)=5.4m@VGS=10V - Low gate charge - Low Crss - Fast switching - Improved dv/dt capability 3 1.Gate 2.Drain 3.Source 1 3 TO-263-2L TO-262L-3L 1 2 3 TO-220-3L TO-252-2L ORDERING INFORMATION Part No. SVG076R5NT SVG076R5NS SVG076R5NSTR SVG076R5NDTR SVG076R5NKL Package TO-220-3L TO-263-2L TO-263-2L TO-252-2L TO-262L-3L Marking 076R5NT 076R5NS 076R5NS 076R5ND 076R5NKL Hazardous Substance Control Pb free Halogen free Halogen free Halogen free Pb free Packing Type Tube Tube Tape & Reel Tape & Reel Tube HANGZHOU SILAN MICROELECTRONICS CO.,LTD http: //.silan..cn Rev.:1.3 Page 1 of 11 Silan Microelectronics...