SVG031R7NL3C Datasheet | Silan Microelectronics

Silan Microelectronics SVG031R7NL3C_Datasheet 115A, 30V N-CHANNEL MOSFET DESCRIPTION SVG031R7NL3C is N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance and high avalanche breakdown tolerance. This device is widely used in power management for UPS and Inverter Systems. Features - 115A, 30V, RDS(on)(typ.)=1.4m@VGS=10V - Low gate charge - Low Crss - Fast switching - Extreme dv/dt rated - 100% avalanche tested - Pb-free lead plating - Ro HS pliant KEY PERFORMANCE PARAMETERS Characteristics VDS VGS(th) RDS(on),max ID Qg.typ Ratings 30 1.3~2.3 1.7 115 54 Unit V V m A n C ORDERING INFORMATION Part No. Package SVG031R7NL3CTR PDFN-8C-3.3x3.3x0.75-0.65 Marking 317C S1 S2 S3 G4 8D 7D 6D 5D PDFN-8C-3.3X3.3X0.75-0.65 Hazardous Substance...