SVG031R7NL3C - 30V N-CHANNEL MOSFET

Silan Microelectronics

Download the SVG031R7NL3C datasheet PDF. This datasheet also covers the SVG031R7NL3C-SilanMicroelectronics variant, as both devices belong to the same 30v n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

SVG031R7NL3C is N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology.

Key Features

115A, 30V, RDS(on)(typ. )=1.4m@VGS=10V.
Low gate charge.
Low Crss.
Fast switching.
Extreme dv/dt rated.
100% avalanche tested.
Pb-free lead plating.
RoHS compliant KEY.

📥 Download Datasheet

SVG031R7NL3C 30v n-channel mosfet by Silan Microelectronics - Datasheet Preview — Note: The manufacturer provides a single datasheet file (SVG031R7NL3C-SilanMicroelectronics_removed.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	SVG031R7NL3C
Manufacturer	Silan Microelectronics
File Size	501.22 KB
Description	30V N-CHANNEL MOSFET
Datasheet	SVG031R7NL3C Datasheet

Other Datasheets by Silan Microelectronics

Part Number	Description
SVG032R4NL3	30V N-CHANNEL MOSFET
SVG036R8NL5	30V N-CHANNEL MOSFET
SVG041R2NL5	40V N-CHANNEL MOSFET
SVG042R5NL5	40V N-CHANNEL MOSFET
SVG062R0NT	60V N-CHANNEL MOSFET
SVG062R8NL5	60V N-CHANNEL MOSFET
SVG063R5NL5	60V N-CHANNEL MOSFET
SVG069R5ND	60V N-CHANNEL MOSFET
SVG069R5NMJ	60V N-CHANNEL MOSFET
SVG069R5NT	60V N-CHANNEL MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

Silan Microelectronics SVG031R7NL3C_Datasheet 115A, 30V N-CHANNEL MOSFET DESCRIPTION SVG031R7NL3C is N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance and high avalanche breakdown tolerance. This device is widely used in power management for UPS and Inverter Systems. FEATURES  115A, 30V, RDS(on)(typ.)=1.4m@VGS=10V  Low gate charge  Low Crss  Fast switching  Extreme dv/dt rated  100% avalanche tested  Pb-free lead plating  RoHS compliant KEY PERFORMANCE PARAMETERS Characteristics VDS VGS(th) RDS(on),max ID Qg.typ Ratings 30 1.3~2.3 1.