SVG041R2NL5 Datasheet | Silan Microelectronics

Silan Microelectronics SVG041R2NL5_Datasheet 150A, 40V N-CHANNEL MOSFET DESCRIPTION SVG041R2NL5 is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance. This device is widely used in power management for UPS and Inverter Systems. Features - 150A, 40V, RDS(on)(typ.)=1.0m@VGS=10V - Low gate charge - Low Crss - Fast switching - Extreme dv/dt rated - 100% avalanche tested - Pb-free lead plating - Ro HS pliant S1 S2 S3 G4 8D 7D 6D 5D 8 7 6 5 65 87 4 23 1 1 32 4 PDFN-8-5X6X0.95-1.27 KEY PERFORMANCE PARAMETERS Characteristics VDS VGS(th) RDS(on),max. ID Qg.typ. Ratings 40 1.4~2.4 1.24 150 87 Unit V V mΩ A n C ORDERING INFORMATION Part No....