SVG062R0NT Datasheet | Silan Microelectronics

Silan Microelectronics SVG062R0NT_Datasheet 240A, 60V N-CHANNEL MOSFET DESCRIPTION SVG062R0NT is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance and high avalanche breakdown tolerance. L This device is widely used in power management for UPS and Inverter Systems. IA Features - 240A, 60V, RDS(on)(typ.)=1.6m@VGS=10V - Low gate charge - Low Crss - Fast switching - Extreme dv/dt rated - 100% avalanche tested - Pb-free lead plating - RoHS pliant KEY PERFORMANCE...