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SVG069R5NMJ - 60V N-CHANNEL MOSFET

Download the SVG069R5NMJ datasheet PDF. This datasheet also covers the SVG069R5ND-SilanMicroelectronics variant, as both devices belong to the same 60v n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

SVG069R5ND(MJ)(T) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology.

The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance.

Key Features

  • 60A, 60V, RDS(on)(typ. )=8m@VGS=10V.
  • Low gate charge.
  • Low Crss.
  • Fast switching.
  • Improved dv/dt capability 12 3 TO-220-3L 12 3 TO-251J-3L.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (SVG069R5ND-SilanMicroelectronics_removed.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number SVG069R5NMJ
Manufacturer Silan Microelectronics
File Size 283.22 KB
Description 60V N-CHANNEL MOSFET
Datasheet download datasheet SVG069R5NMJ Datasheet

Other Datasheets by Silan Microelectronics

Part Number Description
SVG069R5ND 60V N-CHANNEL MOSFET
SVG069R5NT 60V N-CHANNEL MOSFET
SVG062R0NT 60V N-CHANNEL MOSFET
SVG062R8NL5 60V N-CHANNEL MOSFET
SVG063R5NL5 60V N-CHANNEL MOSFET
SVG031R7NL3C 30V N-CHANNEL MOSFET
SVG032R4NL3 30V N-CHANNEL MOSFET
SVG036R8NL5 30V N-CHANNEL MOSFET
SVG041R2NL5 40V N-CHANNEL MOSFET
SVG042R5NL5 40V N-CHANNEL MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Silan Microelectronics SVG069R5ND(MJ)(T)_Datasheet 60A, 60V N-CHANNEL MOSFET DESCRIPTION SVG069R5ND(MJ)(T) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance. This device is widely used in Secondary synchronous rectifier, Power Management for Inverter Systems. 2 1 3 1.Gate 2.Drain 3.Source 1 3 TO-252-2L FEATURES  60A, 60V, RDS(on)(typ.)=8m@VGS=10V  Low gate charge  Low Crss  Fast switching  Improved dv/dt capability 12 3 TO-220-3L 12 3 TO-251J-3L ORDERING INFORMATION Part No.