SVG069R5NMJ Datasheet | Silan Microelectronics

Silan Microelectronics SVG069R5ND(MJ)(T)_Datasheet 60A, 60V N-CHANNEL MOSFET DESCRIPTION SVG069R5ND(MJ)(T) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance. This device is widely used in Secondary synchronous rectifier, Power Management for Inverter Systems. 1 3 1.Gate 2.Drain 3.Source 1 3 TO-252-2L Features - 60A, 60V, RDS(on)(typ.)=8m@VGS=10V - Low gate charge - Low Crss - Fast switching - Improved dv/dt capability 3 TO-220-3L 12 3 TO-251J-3L ORDERING INFORMATION Par...