Datasheet4U Logo Datasheet4U.com

SVG069R5NT - 60V N-CHANNEL MOSFET

This page provides the datasheet information for the SVG069R5NT, a member of the SVG069R5ND-SilanMicroelectronics 60V N-CHANNEL MOSFET family.

Datasheet Summary

Description

SVG069R5ND(MJ)(T) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology.

The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance.

Features

  • 60A, 60V, RDS(on)(typ. )=8m@VGS=10V.
  • Low gate charge.
  • Low Crss.
  • Fast switching.
  • Improved dv/dt capability 12 3 TO-220-3L 12 3 TO-251J-3L.

📥 Download Datasheet

Datasheet preview – SVG069R5NT

Datasheet Details

Part number SVG069R5NT
Manufacturer Silan Microelectronics
File Size 283.22 KB
Description 60V N-CHANNEL MOSFET
Datasheet download datasheet SVG069R5NT Datasheet
Additional preview pages of the SVG069R5NT datasheet.

📁 Similar Datasheet

  • SVG032R4NL5 - 30V N-CHANNEL MOSFET (Silan Semiconductors)
  • SVG034R3NL3C-2LF - 30V N-CHANNEL MOSFET (Silan Semiconductors)
  • SVG-2066 - Variable Gain Amp (Sirenza Microdevices)
  • SVG-2066Z - Variable Gain Amp (Sirenza Microdevices)
Other Datasheets by Silan Microelectronics

Full PDF Text Transcription

Click to expand full text
Silan Microelectronics SVG069R5ND(MJ)(T)_Datasheet 60A, 60V N-CHANNEL MOSFET DESCRIPTION SVG069R5ND(MJ)(T) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance. This device is widely used in Secondary synchronous rectifier, Power Management for Inverter Systems. 2 1 3 1.Gate 2.Drain 3.Source 1 3 TO-252-2L FEATURES  60A, 60V, RDS(on)(typ.)=8m@VGS=10V  Low gate charge  Low Crss  Fast switching  Improved dv/dt capability 12 3 TO-220-3L 12 3 TO-251J-3L ORDERING INFORMATION Part No.
Published: |