SVG069R5NT Description
SVG069R5ND(MJ)(T) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance. This device is widely used in Secondary synchronous rectifier, Power Management for Inverter Systems.
SVG069R5NT Key Features
- 60A, 60V, RDS(on)(typ.)=8m@VGS=10V
- Low gate charge
- Low Crss
- Fast switching
- Improved dv/dt capability