SVG063R5NL5 Datasheet | Silan Microelectronics

Silan Microelectronics SVG063R5NL5_Datasheet 130A, 60V N-CHANNEL MOSFET DESCRIPTION SVG063R5NL5 is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance and high avalanche breakdown tolerance. This device is widely used in power management for UPS and Inverter Systems. Features - 130A, 60V, RDS(on)(typ.)=3.0m@VGS=10V - Low gate charge - Low Crss - Fast switching - Extreme dv/dt rated - 100% avalanche tested - Pb-free lead plating - RoHS pliant S1 S2 S3 G4 8D 7D 6D 5D 8 7 6 5 65...