SVG036R8NL5 Datasheet | Silan Microelectronics

Silan Microelectronics SVG036R8NL5_Datasheet 24A, 30V N-CHANNEL MOSFET DESCRIPTION SVG036R8NL5 is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance and high avalanche breakdown tolerance. This device is widely used in power management for UPS and Inverter Systems. Features - 24A, 30V, RDS(on)(typ.)=5.6m@VGS=10V - Low gate charge - Low Crss - Fast switching - Extreme dv/dt rated - 100% avalanche tested - Pb-free lead plating - Ro HS pliant S1 S2 S3 G4 8D 7D 6D 5D 8 7 6 5 65 87 4 23 1 1 32 4 PDFN-8-5X6X0.95-1.27 KEY PERFORMANCE PARAMETERS Characteristics VDS VGS(th) RDS(on),max. ID Qg.typ. Ratings 30 1.2~2.2 6.8 24 15 Unit V V m A n C ORDERING INFORMATION Part No....