SVG032R4NL3 Datasheet | Silan Microelectronics

Silan Microelectronics SVG032R4NL3_Datasheet 100A, 30V N-CHANNEL MOSFET DESCRIPTION SVG032R4NL3 is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance and high avalanche breakdown tolerance. This device is widely used in power management for UPS and Inverter Systems. Features - 100A, 30V, RDS(on)(typ.)=2.0m@VGS=10V - Low gate charge - Low Crss - Fast switching - Extreme dv/dt rated - 100% avalanche tested - Pb-free lead plating - Ro HS pliant KEY PERFORMANCE PARAMETERS Characteristics VDS VGS(th) RDS(on),max. ID Qg.typ. Ratings 30 1.3~2.3 2.4 100 40 Unit V V m A n C ORDERING INFORMATION Part No. SVG032R4NL3TR Package PDFN-8-3.3x3.3x0.75-0.65 Marking 32R4 S1 8D S2 7D S3...