SVG032R4NL3 - 30V N-CHANNEL MOSFET

Silan Microelectronics

General Description

SVG032R4NL3 is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology.

Key Features

100A, 30V, RDS(on)(typ. )=2.0m@VGS=10V.
Low gate charge.
Low Crss.
Fast switching.
Extreme dv/dt rated.
100% avalanche tested.
Pb-free lead plating.
RoHS compliant KEY.

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SVG032R4NL3 30v n-channel mosfet by Silan Microelectronics - Datasheet Preview

Datasheet Details

Part number	SVG032R4NL3
Manufacturer	Silan Microelectronics
File Size	418.14 KB
Description	30V N-CHANNEL MOSFET
Datasheet	SVG032R4NL3 Datasheet

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Silan Microelectronics SVG032R4NL3_Datasheet 100A, 30V N-CHANNEL MOSFET DESCRIPTION SVG032R4NL3 is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance and high avalanche breakdown tolerance. This device is widely used in power management for UPS and Inverter Systems. FEATURES  100A, 30V, RDS(on)(typ.)=2.0m@VGS=10V  Low gate charge  Low Crss  Fast switching  Extreme dv/dt rated  100% avalanche tested  Pb-free lead plating  RoHS compliant KEY PERFORMANCE PARAMETERS Characteristics VDS VGS(th) RDS(on),max. ID Qg.typ. Ratings 30 1.3~2.3 2.